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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 8N50P IXTP 8N50P
VDSS ID25
RDS(on)
= 500 = 8 0.8
V A
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 18 TC = 25 C
Maximum Ratings 500 500 30 40 8 14 8 20 400 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C C
TO-263 (IXTA)
G
S (TAB)
TO-220 (IXTP)
G
DS
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-220 TO-263 (TO-220)
300 260
1.13/10 Nm/lb.in. 4 3 g g Features
l l
l
Symbol Test Conditions (TJ = 25 C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 100A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 500 3.0 5.5 100 5 50 0.8 V V nA A A
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99321E(03/06)
IXTA 8N50P IXTP 8N50P
Symbol Test Conditions Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. 5 8 1050 VGS = 0 V, VDS = 25 V, f = 1 MHz 120 12 22 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 18 (External) 28 65 23 20 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 7 7 S pF pF pF ns ns ns ns nC nC nC 0.83 C/W (TO-220) 0.25 C/W TO-263 (IXTA) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 8 14 1.5 400 A A V ns TO-220 (IXTP) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 8 A, VGS=0V, VR=100V -di/dt = 100 A/s
Pins: 1 - Gate 3 - Source
2 - Drain 4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXTA 8N50P IXTP 8N50P
Fig. 1. Output Characteristics @ 25C
8 7 6 VGS = 10V 8V 7V 16 14 12 7V VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
5 4 3 2 1 0 0 1 2 3 4 5 6 7 5V 6V
I D - Amperes
10 8 6 4 2 5V 0 0 3 6 9 12 15 18 21 24 27 30
6V
V D S - Volts Fig. 3. Output Characteristics @ 125C
8 7 6 VGS = 10V 8V 7V 3.1 2.8 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 4A I D = 8A
I D - Amperes
5 4 3 2 1 0 0 2 4 6 8
6V
5V
10
12
14
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3.2 3 2.8 VGS = 10V TJ = 125 C 9 8 7
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
2.6
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 12 14 16 18 TJ = 25 C
I D - Amperes
2.4
6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXTA 8N50P IXTP 8N50P
Fig. 7. Input Adm ittance
14 12 10 14 12 TJ = -40 C 10 25 C 125 C 8 6 4 2 0 3.5 4 4.5 5 5.5 6 6.5 7 0 2 4 6 8 10 12 14
Fig. 8. Trans conductance
I D - Amperes
8 6 4 2 0 TJ = 125 C 25 C -40 C
V G S - V olts Fig. 9. Source Curr e nt vs . Sour ce -To-Drain V oltage
24 10 9 20 16 8 7 V DS = 250V I D = 4A I G = 10m A
g
fs
- Siemens
I D - A mperes Fig. 10. Gate Charge
I S - Amperes
V G S - Volts
TJ = 25 C 0.7 0.8 0.9 1
6 5 4 3 2 1
12 TJ = 125 C 8 4
0 0.4 0.5 0.6
0 0 2 4 6 8
G
10
12
14
16
18
20
22
V S D - V olts Fig. 11. Capacitance
10000 f = 1MH z 100
Q
- nanoCoulombs
Fig. 12. Forw ard-Bias Safe Ope r ating Ar e a
R DS(on) Lim it C iss
Capacitance - picoFarads
I D - Amperes
1000
10 25s 100s 1 TJ = 150C 1m s DC 10m s
C oss 100
C rss 10 0 5 10 15 20 25 30 35 40 0.1 10
TC = 25C 100 1000
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - V olts
IXTA 8N50P IXTP 8N50P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
R ( t h ) J C - C / W
0.10 0.001 0.01 0.1 1 10
Pulse Width - Seconds
(c) 2006 IXYS All rights reserved
IXYS REF: T_8N50P (37) 03-21-06-A.XLS

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